Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain
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چکیده
منابع مشابه
Performance variability in wrap-round gate silicon nano- transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain
A recently developed 3D self-consistent Non-equilibrium Green Function technique is used to study technologically identical silicon wrap-round gate 3D nanowire devices each of which has a different atomistically-resolved spatial distribution of dopants in the source and drain but in the absence of inhomogeneities in the channel/oxide interface and for an undoped channel. The simulations broadly...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2008
ISSN: 1742-6596
DOI: 10.1088/1742-6596/109/1/012026